H. ohno science 1998 281 951

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Nettet28. okt. 2002 · We have fabricated Cr-doped bulk Ge single crystal using the vertical gradient solidification method. The material shows ferromagnetic ordering at 126 K, as … Nettet8. okt. 2010 · X. D. Bai, P. X. Gao, Z. L. Wang, and W. G. Wang, Dual-mode mechanical resonance of individual ZnO nanobelts, Appl. Phys. Lett ., 82, No. 26, 4806–4808 (2003). Article Google Scholar H. Ohno, Making nonmagnetic semiconductors ferromagnetics, Science, 281, 951–956 (1998). Article Google Scholar

Generation of HNO and HSNO from Nitrite by …

Nettet/ www.sciencexpress.org / 11 January 2001 / Page 2/ 10.1126/science.1056186 LaAlO 3 substrate do not show any magnetic structure within QH[SHDULPHQWDURUOHURIa 7 , being consistent with the report by Chauvet et al. (12 ). Nettet6. jun. 2001 · Face-centered tetragonal (fct) η-phase manganese nitride films have been grown on magnesium oxide (001) substrates by molecular-beam epitaxy. For growth … softpeoplearea

Hiroshi OHNO MD, PhD RIKEN, Wako RIKEN AICS Center for ...

Nettet5. jul. 2001 · F. Matsukura, H. Ohno, A. Shen, Y. Sugawara Physics, Materials Science 1998 Magnetotransport properties of $p$-type ferromagnetic (Ga,Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the $p\ensuremath {-}d$ exchange between holes and Mn… Expand 812 NettetOhno, H. (1998). "Making nonmagnetic semiconductors ferromagnetic". Science. 281 (5379): 951–956. Bibcode: 1998Sci...281..951O. doi: 10.1126/science.281.5379.951. PMID 9703503. Awards [ edit] 1998 - IBM Japan Science Award NettetA dynamical mean-field approximation study of a tight-binding model for Ga $ _ {1-x} $ Mn $ _ {x} $ As softpeefect

Spin-dependent properties of ferromagnetic/nonmagnetic GaAs ...

Resistivity model for both paramagnetic and ferromagnetic phases

Nettet5. feb. 2001 · Department of Materials Science, Tokyo Institute of Technology, Tokyo 152-8551, Japan; Kanagawa Academy of Science and Technology (KAST), Kawasaki 213 … Nettet12. aug. 2009 · H Ohno et al, Phys. Rev. Lett. 68 2664 (1992) Article ADS Google Scholar H Ohno, A Shen et al, Appl. Phys. Lett. 69 363 (1996) Article ADS Google Scholar H Ohno Science 281 951 (1998) Article ADS Google Scholar H Ohno, J Magn Magn. Mater. Handbook of Magn. Mater. soft pelican paintNettet10. mai 2000 · We have studied the quasibinary ferromagnetic semiconductor (Ga0.98Mn0.02)As by magnetic circular dichroism in x-ray absorption. We find a richly … soft pencil in sewing

"Nettet1. apr. 2004 · Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 281 , 951–956 (1998) Article ADS CAS Google Scholar " - H. ohno science 1998 281 951

H. ohno science 1998 281 951

Observation of crystallite formation in ferromagnetic Mn …

NettetH. Ohno, “Making Nonmagnetic Semiconductors Ferromagnetic,” Science, Vol. 281, No. 5379, 1998, pp. 951956. doi10.1126/science.281.5379.951 Nettet15. mar. 2024 · In this paper, we demonstrate that V 0.027 Bi 0.973 TeI, a material with both giant bulk Rashba effect and ferromagnetism, can reverse its magnetization by self-generated spin–orbit torque. Through first-principles calculation, it is found that the giant bulk Rashba effect arises from both bulk space inversion asymmetry and strong …

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Nettet25. sep. 2013 · Taking NO for an answer: A mechanistic study has shown that a heme-iron-catalyzed pathway (see scheme) could lead to the nitrite-/sulfide-induced formation … Nettet21. des. 2000 · Ohno, H. Science 281, 951–956 ( 1998). ADS CAS Article Google Scholar Matsukura, F., Ohno, H., Shen, A. & Sugawara, Y. Phys. Rev. B 57, R2037 (1998). Koshihara, S. et al. Phys....

Nettet11. feb. 2000 · Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T C of Ga 1− x Mn x As and that of its II-VI counterpart Zn 1− x Mn … Nettet1. H. Ohno, Science 281, 951 (1998). 2. H. Ohno, J. Cryst. Growth 251, 285 (2003). 3. T. Jungwirth et al., Phys. Rev. B 72, 165204 (2005). 4. T. Dietl, H. Ohno, F. Matsukura, J. …

Nettet15. aug. 2003 · Figure 1B shows the magnetic field H dependence of the Hall resistance, R Hall, of sample A at zero gate bias from 10 to 50 K; R Hall is dominated by the … NettetБиография. Учился в Токийском университете.Получил степень доктора наук в Токийском университете (1982). Провёл год в аспирантуре Корнельского университета (1979).Лектор в Инженерной школе Университета Хоккайдо (1982—1983 ...

Nettet11. feb. 2000 · Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T C of Ga 1− x Mn x As and that of its II-VI counterpart Zn 1− x Mn x Te and is used to predict materials with T C exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

Nettet30. mar. 2001 · Abstract. An electron hopping on non-coplanar spin sites with spin chirality obtains a complex phase factor (Berry phase) in its quantum mechanical amplitude that … softpeople sdsuNettet‪Tohoku University‬ - ‪‪Cited by 100,838‬‬ softpeople cnaqNettetOhno, H. Making Nonmagnetic Semiconductors Ferromagnetic. Science 1998, 281, 951–956. [Google Scholar] Dietl, T. A Ten-Year Perspective on Dilute Magnetic Semiconductors and Oxides. Nat. Mater. 2010, 9, 965–974. [Google Scholar] Yang, Z. A Perspective of Recent Progress in ZnO Diluted Magnetic Semiconductors. soft penny loafers for women soft penguin plushieNettet1. jan. 2002 · Carrier-induced ferromagnetism has been observed in several (III, Mn)V semiconductors. We review the theoretical picture of these ferromagnetic semiconductors that emerges from a model with kinetic-exchange coupling between localized Mn spins and valence-band carriers. We discuss the applicability of this model, the validity of a mean … softpeople mghNettet7. nov. 2024 · Editor’s Choice articles are based on recommendations by the scientific editors of MDPI journals from around the world. ... Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 1998, 281, 951–956. [Google Scholar] softpeople login king countyNettet25. feb. 2002 · A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically biased (Ga, Mn)As … softpeople login baptist